Apparatus for performing epitaxial growth of ZNSE crystal from m

Details Apparatus for performing epitaxial growth of ZNSE crystal from m Apparatus for performing epitaxial growth of ZNSE crystal from m

1987-08-25

1990-11-06

Doll, John

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

Including specific material of construction

422250, 422253, F30B 3500

Patent

active

049684914

ABSTRACT:
In conducting a liquid phase epitaxial growth of a Zn crystal on a substrate wherein a batch of Se melt serving as a solvent is used and relying on a vapor pressure controlling technique and a temperature difference method, a Zn vapor pressure controlling region is disposed, via the Se melt, in a direction vertical to the surface of the substrate which is contained in the growth region, and a ZnSe source crystal is disposed in such a way that it is supplied into the Se melt in a lateral direction of this melt. Whereby, a ZnSe single crystal having a good cyrstal perfection, and a good linearity of the thickness of the grown crystal relative to time can be obtained.

REFERENCES:
patent: 3374067 (1968-03-01), Johnson et al.
patent: 3796548 (1974-03-01), Boss et al.
patent: 4315796 (1982-02-01), Nishizawa
Patents Abstracts of Japan, C-108, Jun. 16, 1982, vol. 6/No. 106.
Patents Abstracts of Japan, C-120, Aug. 19, 1982, vol. 6/No. 158.
Patents Abstracts of Japan, C-149, Feb. 4, 1983, vol. 7/No. 28.

Affiliated with

Also associated with

Rating

Apparatus for performing epitaxial growth of ZNSE crystal from m does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for performing epitaxial growth of ZNSE crystal from m, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for performing epitaxial growth of ZNSE crystal from m will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1305953