Coherent light generators – Particular resonant cavity – Specified cavity component
Reexamination Certificate
2005-10-25
2005-10-25
Lee, Wilson (Department: 2821)
Coherent light generators
Particular resonant cavity
Specified cavity component
C372S043010, C372S044010, C372S045013, C372S046012, C372S092000, C438S478000, C438S479000, C438S480000, C438S481000, C438S482000, C438S483000, C438S484000, C438S485000, C438S486000, C438S795000
Reexamination Certificate
active
06959029
ABSTRACT:
A wide-slit lateral growth projection mask, projection system, and corresponding crystallization process are provided. The mask includes an opaque region with at least one a transparent slit in the opaque region. The slit has a width in the range of 10X to 50X micrometers, with respect to a X:1 demagnification system, and a triangular-shaped slit end. The triangular-shaped slit end has a triangle height and an aspect ratio in the range of 0.5 to 5. The aspect ratio is defined as triangle height/slit width. In some aspects, the triangular-shaped slit end includes one or more opaque blocking features. In another aspect, the triangular-shaped slit end has stepped-shaped sides. The overall effect of the mask is to promote uniformly oriented grain boundaries, even in the film areas annealed under the slit ends.
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J.S. Im et al.; Controlled Super-Lateral Growth of Si Films; Phys. Stat. sol.(1) 166, 1998, pp 603-617.
Crowder Mark A.
Mitani Yasuhiro
Voutsas Apostolos T.
Al-Nazer Leith
Curtin Joseph P.
Lee Wilson
Ripma David C.
Sharp Laboratories of America Inc.
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