Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Patent
1995-01-27
1996-04-30
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
118723ME, C30B 3500
Patent
active
055115098
ABSTRACT:
A method and apparatus (10) for forming a p-doped layer (68, 80, 92) of Group II and Group VI elements by molecular beam epitaxial process in which a nitrogen dopant is introduced as the layer (68, 80, 92) is being grown. In one embodiment, molecular nitrogen is passed through a plasma generator (46) for convening it to activated nitrogen, and the activated nitrogen is conducted through an elongated guide tube (50) toward the substrate (66) upon which a Group II-Group VI layer (68, 80, 92) is being grown. In one embodiment, an n-type dopant source (72) is also provided, the apparatus (10) being operable for forming electrical devices (86, 88) having successive layers (78, 80, 90, 92, 94) of differing electrical characteristics.
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Breneman R. Bruce
Crane John D.
Donaldson Richard L.
Garrett Felisa
Kesterson James C.
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