Coating apparatus – Gas or vapor deposition – With treating means
Patent
1995-06-06
1998-01-27
Niebling, John
Coating apparatus
Gas or vapor deposition
With treating means
20429806, C23C 1600
Patent
active
057118124
ABSTRACT:
An apparatus for improving dose uniformity in the PLAsma Doping (PLAD) ion implantation of a target material is described. By providing means for simultaneously biasing both the electrode, upon which the target is disposed, and a separately biasable concentric structure introduced about the electrode and sufficiently close to the target, together with means for adjustable bias variation between the electrode and the structure one can sufficiently adjust the shape of the implantation plasma, e.g. induced electric field and plasma sheath thickness, in order to effectively provide a uniform dose distribution during PLAD ion implantation processes.
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Susan B. Felch et al., "Studies of Ultra-Shallow p+-n Junction Formation Using Plasma Doping", Ion Implantation Technology--94 (1995), pp. 981-984.
T. Sheng et al., "Characteristics of a Plasma Doping System For Semiconductor Device Fabrication", Journal of Vacuum Science Technology B 12(2), Mar./Apr. 1994, pp. 969-972.
Nathan W. Cheung, "Plasma Immersion Ion Implantation For ULSI Processing", Nuclear Instruments and Methods in Physics Research B55 (1991), pp. 811-820.
Chapek David LeRoy
Felch Susan Benjamin
Kissick Michael William
Malik Shamim Muhammad
Sheng Tienyu Terry
Chang Joni Y.
Niebling John
Varian Associates Inc.
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