Apparatus for nondestructively measuring characteristics of a se

Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor

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324158R, G01R 3126

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active

045636427

ABSTRACT:
To nondestructively measure the carrier lifetime and cutoff frequency of a semiconductor wafer having a junction, the apparatus of this invention comprises means for radiating a pulsated photo beam whose frequency is changeable to the semiconductor wafer having a junction, means for taking out the resulting photovoltage by capacitance coupling and means for calculating the carrier lifetime and cutoff frequency from the chopping-frequency dependence characteristics of this photovoltage.

REFERENCES:
patent: 4286215 (1981-08-01), Miller
patent: 4333051 (1982-06-01), Goodman
Kamienecki, "Determination of Surface Space Charge Capacitance Using a Light Probe", J. Vac. Sci. Technol., 20(3), Mar. 1982, pp. 811-814.
Japanese Journal of Applied Physics, Munakata, C., et al., "Non-Destructive Method of Observing . . . p-n Junctions . . . ", vol. 20, No. 2, Feb. 1981, pp. L137-L140.
Ogata, K., "Modern Control Engineering", 1970, p. 381.
Ryvkin, S., "Photoelectric Effects in Semiconductors", 1964, pp. 35-45.
Sze, S., "Physics of Semiconductor Devices", 1969, p. 108.
Nakhmanson, R., "Frequency Dependence of the Photo-EMF of Strongly Inverted Ge and Si MIS Structures"-I. Theory, Solid-State Electronics, vol. 18, 1975, pp. 617-626.

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