Apparatus for moving exhaust tube of barrel reactor

Coating apparatus – Gas or vapor deposition

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74110, 118 50, 432241, 432245, C23C 1600

Patent

active

060398078

ABSTRACT:
An epitaxial barrel reactor for depositing a material on a semiconductor wafer by a chemical vapor deposition process using a reactant gas. The barrel reactor includes a receptacle defining a reaction chamber sized to receive at least one semiconductor wafer. The receptacle has an inlet port for introducing reactant gas to the reaction chamber and an exhaust port for removing reactant gas from the reaction chamber. The reactor also includes an exhaust tube sealingly engageable with the exhaust port of the receptacle for transporting reactant gas to facility piping to remove the gas from the reaction chamber after the chemical vapor deposition process. In addition, the reactor includes an actuator spaced from the receptacle for moving the exhaust tube between an operating position in which the tube sealingly engages the exhaust port of the receptacle and a maintenance position in which the tube is spaced from the exhaust port to provide access to the receptacle. Further, the reactor includes a mechanism operatively connected between the exhaust tube and the actuator for transmitting motion from the actuator to the exhaust tube to move the tube between the operating position and the maintenance position.

REFERENCES:
patent: 4179884 (1979-12-01), Koeslin
patent: 4928626 (1990-05-01), Carloson et al.
patent: 5053247 (1991-10-01), Moore
patent: 5154773 (1992-10-01), Furusawa
patent: 5407349 (1995-04-01), Hansotte, Jr. et al.
patent: 5578132 (1996-11-01), Yamaga et al.
Abstract of Japan 8-236,463 (Published Sep. 13, 1996).

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