Electrical generator or motor structure – Dynamoelectric – Linear
Patent
1997-02-26
1999-08-31
Ramirez, Nestor
Electrical generator or motor structure
Dynamoelectric
Linear
7447901, 33568, 29834, H02K 4100, G03F 900
Patent
active
059457473
ABSTRACT:
A thin film field effect transistor includes: a) a thin film channel region; b) a pair of opposing electrically conductive first and second source/drain regions adjacent the thin film channel region; c) a gate insulator and a gate positioned adjacent the thin film channel region for electrically energizing the channel region to switch on the thin film field effect transistor; d) the first source/drain region having a first thickness, the second source/drain region having a second thickness, the channel region having a third thickness; at least one of the first and second thicknesses being greater than the third thickness. Methods are disclosed for making thin field effect transistors.
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Chen Chia-Tung
Neff Edward A.
Portegies Hans
Vu Toan
Jones Judson H.
Ramirez Nestor
Systems, Machines, Automation Components Corporation
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