Apparatus for monitoring the dry etching of a dielectric film to

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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216 60, 216 67, 216 79, 438 9, 438 16, H01L 2166

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056584180

ABSTRACT:
Detecting the desired etch end point in the dry etching of a structure that includes a dielectric film formed onto a substrate down to a given thickness Ef. The structure is placed in the chamber of an etching equipment provided with a view-port. A light source illuminates a portion of the structure at a normal angle of incidence through the view-port. The light contains at least two specified wavelengths (L1, L2) whose value is greater than a minimum value equal to 4*N*e (wherein N is the index of refraction and e the thickness error of the dielectric). The reflected light is applied to spectrometers tuned to each specified wavelength, for converting the reflected light into interference signals that are processed and analyzed in a dedicated unit to generate primary signals (S1, S2). An analysis of the primary signals is performed after a predetermined delay. For each wavelength, a pre-selected extremum of the primary signal is detected and a predetermined number of extrema is counted. The counting stops when the last extremum just before Ef is reached. As a result, the distance D between the last extremum and the given thickness is now determined. The etch rate ER is also measured in-situ before the last extremum.

REFERENCES:
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M. Haverlag, et al., "In situ ellipsometry and reflectometry during etching of patterned surfaces: Experiments and simulations" J. Vac. Sci. Technol. B 10, No. 6, pp. 2412-2418, Nov./Dec. 1992.
"Method for Optical Interference Measurement and Control of Etching" IBM Technical Disclosure Bulletin, vol. 34, No. 10B, pp. 275-277, Mar., 1992.

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