Apparatus for monitoring films during MOCVD

Details Apparatus for monitoring films during MOCVD Apparatus for monitoring films during MOCVD

1994-12-19

1995-12-05

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

117200, 117202, 118712, 427 10, C23C 1400

Patent

active

054725054

ABSTRACT:
An apparatus for monitoring a film growth is disclosed, in which, when a crystalline thin film is grown by applying an MOCVD (metalorganic chemical vapor deposition method), the variation of the thickness and composition due to certain factors can be detected with real time during the film growing process, and an in-situ adjustment is possible. As the optical detector for detecting two sets of reflected beams which are reflected from the film, a silicon detector and a germanium detector are used, the former being suitable for detecting short wavelength laser beams, and the latter being suitable for detecting long wavelength laser beams. Thus two different wavelengths are detected with real time, thereby measuring the thickness and composition of the film.

REFERENCES:
patent: 4049352 (1977-09-01), Lardon et al.
patent: 5009485 (1991-04-01), Hall
patent: 5232547 (1993-08-01), Drowley et al.
patent: 5366556 (1994-11-01), Prince et al.

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