Apparatus for molecular beam epitaxy

Coating apparatus – Gas or vapor deposition – Crucible or evaporator structure

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118500, 118729, 156DIG103, 156614, 414217, C23C 1312

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active

045427127

ABSTRACT:
An apparatus for molecular beam epitaxy according to the present invention is so constructed that a substrate is introduced into a vacuum vessel with a substrate surface for epitaxial growth facing in the direction of gravity, and that the substrate is conveyed to and transferred into vacuum chambers for performing processes necessary for the epitaxial growth, with the substrate surface maintained in the direction of gravity and without directly touching the substrate surface.

REFERENCES:
patent: 4181544 (1980-01-01), Cho
patent: 4201152 (1980-05-01), Cuscher
patent: 4412771 (1983-11-01), Gerlach et al.
patent: 4464342 (1984-08-01), Tsang

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