Apparatus for microwave processing in a magnetic field

Details Apparatus for microwave processing in a magnetic field Apparatus for microwave processing in a magnetic field

1992-05-29

1994-04-12

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156643, 118723R, H01L 2100

Patent

active

053022262

ABSTRACT:
A microwave-assisted plasma processing apparatus has a reaction chamber in which a substrate holder is provided to support a substrate to be treated. The holder is formed congruent with the inside of reaction chamber and located to substantially separate a reaction space in the reaction chamber save for a narrow clearance therebetween through which exhausted gas passes from said reaction space into said auxiliary space. By this structure, high density plasmas can be formed in the reaction chamber without substantial loss of input microwave energy.

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"The American Heritage Dictionary of The English Language"; .COPYRGT. 1969, ISBN 395-09066-0, p. 829.
"The Relationship Between Surface Potential and Etching Characteristics with ECR Plasma"; Fujiwara et al.; 1988 Dry Process Symposium; pp. 9-14.

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