Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing
Patent
1997-02-27
2000-06-06
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
With means for measuring, testing, or sensing
117 14, 117202, C03B 3500
Patent
active
060713402
ABSTRACT:
A method of and system for determining the melt-level in a crystal growing system. A rangefinder emits a signal to reflect off the melt. The reflected signal is directed to a retroreflector. The retroreflector redirects the signal along a parallel path back to the melt surface. The redirected signal is reflected off the melt surface back to the rangefinder, where it is analyzed to determine the distance traveled by the signal. From this, changes in melt-level are determined and the melt-level may be appropriately controlled.
REFERENCES:
patent: 4508970 (1985-04-01), Ackermann
patent: 4915775 (1990-04-01), Katsuoka et al.
patent: 5408952 (1995-04-01), Wakabayashi et al.
patent: 5660629 (1997-08-01), Shiraishi et al.
General Signal Technology Corporation
Hiteshew Felisa
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