Apparatus for measuring the distribution of irregularities on a

Optics: measuring and testing – Of light reflection

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Details

356371, 356354, 356237, G01N 2155, G01B 1130, G01B 902, G01N 2100

Patent

active

042919908

ABSTRACT:
An optical apparatus for measuring irregularities on the mirror surface of, for example, a silicon wafer used to provide a semiconductor integrated circuit. Irradiates on the mirror surface light fluxes arranged in a special form, for example, in the lattice form. By observing the pattern of light fluxes reflected from said mirror surface, one can measure the surface irregularities. A light flux issued from a light source is divided by a photomask or diffraction grating into first light fluxes irradiated all over the mirror surface and second light fluxes surrounding the respective first light fluxes in the continuous or discontinuous annular form, thereby ensuring the simultaneous measurement of the distribution of extensive irregularities over the entire mirror surface by the first light fluxes and the distribution of local irregularities on said mirror surface by the second light fluxes.

REFERENCES:
patent: 3439988 (1969-04-01), Breske
Takasu et al., "Invited: Induced Defects in Crystals Through Mechanical Processing," Proceedings of the 6th Conference on Solid State Devices, Tokyo, 1974, pp. 261-263.

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