Apparatus for measuring semiconductor device resistance

Electricity: measuring and testing – Conductor identification or location – Inaccessible

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324 64, G01R 2702, G01R 2714

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042186501

ABSTRACT:
A test structure for enabling the accurate measurement of the resistance characteristics of a semiconductor material, of the type which includes one or more pairs of electrical terminals disposed on the surface of the material to enable measurements of the resistance encountered by currents passed between the terminals. A pair of terminals includes a first terminal extending in a closed path, such as a circle, around a second terminal, so that all currents flowing between the terminals flows along a region of known width and length. Two or more pairs of concentric terminals can be utilized, wherein the ratio of radii of each pair of terminals is the same as the ratio for all other pairs of terminals, to facilitate the calculation of the contact resistance between each terminal and the semiconductor surface, as well as the calculation of the resistance of the semiconductor material apart from the effect of the terminal-to-semiconductor contact resistances.

REFERENCES:
patent: 2437697 (1948-03-01), Kalom
patent: 3115602 (1963-12-01), Sutton et al.
patent: 3229200 (1966-01-01), Rayburn
patent: 3754186 (1973-08-01), Sambhu
patent: 3988669 (1976-10-01), Fasching
Dahmen, Measuring the Contact Resistance of Metallization on Silicon, IBM Technical Disclosure Bulletin, Aug. 1971, p. 969.
Moffitt, A Versatile & Economical Impedance Plethysmograph, Instrumentation Symposium, May 1972, pp. 15-20.

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