Apparatus for measuring overlay error

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Details

356354, 356356, 356358, G01B 902, G06F 1560

Patent

active

047034343

ABSTRACT:
The present invention is directed to new and improved apparatus for measuring overlay error between a wafer pattern and a mask pattern projected onto the wafer pattern by a lithographic exposure instrument, which includes a grating mask; a grating wafer having reflective lines alternating with non-reflective spaces patterned like the mask pattern; the lithographic instrument having projection optics mounted to project an image of the mask on the wafer, and a mechanism for moving the grating mask and grating wafer relative to the projection optics; the grating on the wafer being offset from the grating on the mask forming Moire fringes corresponding to the overlay error between the wafer pattern and a mask pattern projected onto the wafer; a photodiode array wherein each photodiode corresponds to a pixel on the grating wafer; viewing optics mounted to project the Moire fringes onto the photodiode.

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