Apparatus for measuring minority carrier lifetimes in semiconduc

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

324752, 324765, G01R 3126

Patent

active

059296526

ABSTRACT:
An apparatus for determining the minority carrier lifetime of a semiconductor sample includes a positioner for moving the sample relative to a coil. The coil is connected to a bridge circuit such that the impedance of one arm of the bridge circuit is varied as sample is positioned relative to the coil. The sample is positioned relative to the coil such that any change in the photoconductance of the sample created by illumination of the sample creates a linearly related change in the input impedance of the bridge circuit. In addition, the apparatus is calibrated to work at a fixed frequency so that the apparatus maintains a consistently high sensitivity and high linearly for samples of different sizes, shapes, and material properties. When a light source illuminates the sample, the impedance of the bridge circuit is altered as excess carriers are generated in the sample, thereby producing a measurable signal indicative of the minority carrier lifetimes or recombination rates of the sample.

REFERENCES:
patent: 2859407 (1958-11-01), Henisch
patent: 3805160 (1974-04-01), Philbrick et al.
patent: 3890564 (1975-06-01), Watanabe et al.
patent: 3939415 (1976-02-01), Terasawa
patent: 4015203 (1977-03-01), Verkuil
patent: 4286215 (1981-08-01), Miller
patent: 4949034 (1990-08-01), Imura et al.
patent: 5047713 (1991-09-01), Kirino et al.
patent: 5081414 (1992-01-01), Kusama et al.
patent: 5179333 (1993-01-01), Washizuka et al.
patent: 5406214 (1995-04-01), Boda et al.
patent: 5430376 (1995-07-01), Viertl
patent: 5451886 (1995-09-01), Ogita et al.
patent: 5453703 (1995-09-01), Goldfarb
patent: 5459408 (1995-10-01), Chen
patent: 5488305 (1996-01-01), Bloom et al.
patent: 5514337 (1996-05-01), Groger et al.
"Simple Contactless Method for Measuring Decay Time of Photoconductivity in Silicon," Lichtenstein and Willard, Jr., Department of Physics, Rensseiaer Polytechnic Institute, Troy, N.Y., pp. 133-134, (Sep. 1996).
"Minority-Carrier Lifetime in III-V Semiconductors," Ahrenkiel, Semiconductors and Semimetals, vol. 39, Academic Press, Inc., pp. 39-150, (1993).
"Contactless Measurement of Carrier Lifetime in Silicon Thick Wafers," Maekawa, Yamagishi, and Inoue, Jpn. J. Appl. Phys., vol. 32, pp. 5740-5747,(1993).
"Determination of Surface Recombination Velocity and Bulk Lifetime in Detector Grade Silicon and Germanium Crystals," Derhacobian, Fine, Walton, Wong, Rossington, and Luke, IEEE Transactions on Nuclear Science, vol. 41, No. 4, pp. 1026-1030, (Aug. 1994).
Defect Monitoring and Control for Crystalline Silicon Processing, M'saad, Norga, Michel, and Kimerling, AIP Conference Proceeding, vol. 306, Am. Institute of Physics Press (1994).
"Ultra-High Frequency Photoconductive Decay for Measuring Recombination Lifetime in Silicon," Ahrenkiel, AIP Conference Proceeding, vol. 353, Am. Institute of Physics Press (1996).
"Contactless Measurement of Bulk Carrier Lifetime in Thick Silicon Wafers by an Induced Eddy Current," Maekawa, Fujiwara, and Yamagishi, Semicond. Sci. Technol., vol. 10, pp. 18-24 (1995).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Apparatus for measuring minority carrier lifetimes in semiconduc does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for measuring minority carrier lifetimes in semiconduc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for measuring minority carrier lifetimes in semiconduc will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-883055

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.