Apparatus for measuring carrier lifetimes of a semiconductor waf

Details Apparatus for measuring carrier lifetimes of a semiconductor waf Apparatus for measuring carrier lifetimes of a semiconductor waf

1984-01-31

1986-04-08

Levy, Stewart J.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324158R, G01R 3126

Patent

active

045815780

ABSTRACT:
A carrier lifetime measuring apparatus according to the present invention has a construction wherein a first photon beam of a wavelength capable of rendering the optical absorption coefficient of a semiconductor sample very small when the semiconductor sample having a potential barrier in the vicinity of its surface is irradiated with the radiation, and a second photon beam of a wavelength capable of rendering the optical absorption coefficient very large are respectively chopped to alternately irradiate the identical place of the semiconductor sample with the chopped beams; first and second photovoltages which are generated in the semiconductor sample by these photon beams are detected by capacitance coupling; and the ratio between a first amplitude variation and a second amplitude variation is obtained from the amplitudes of the detected photovoltages; thereby to evaluate a minority carrier lifetime in the semiconductor sample.

REFERENCES:
patent: 4122383 (1978-10-01), von Roos
Munakata, C. et al., "Non-Destructive Method of Observing Inhomogeneities in p-n Junctions with a Chopped Photon Beam", Japanese J. Appl. Phys., vol. 20, No. 2, Feb. 1981, pp. L137-L140.

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