Apparatus for manufacturing single silicon crystal

Chemical apparatus and process disinfecting – deodorizing – preser – Chemical reactor – Including specific material of construction

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C30B 3500

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active

049577123

ABSTRACT:
An apparatus for manufacturing a single silicon crystal comprises a quartz crucible accomodated into a graphite crucible, a partition member partitioning molten silicon material in the quartz crucible into a single silicon growing portion on the inner side and a material melting portion on the outer side, a heater for maintaining the molten silicon material in the single silicon growing portion at a temperature appropriate for growing the single silicon crystal and for supplying heat for melting the raw materials fed into the material melting portion, and small holes made in the partition member. The partition member is made of an opaque quartz glass. The material melting portion is replenished with the raw materials and single silicon crystal is pulled from the single silicon growing portion. Molton silicon material moves from the material melting portion into the single silicon growing portion through small holes made in the partition member.

REFERENCES:
patent: 4028058 (1977-06-01), Beinert et al.
patent: 4028137 (1977-06-01), Ellbrunner et al.
patent: 4242553 (1980-12-01), Berkman et al.
patent: 4330362 (1982-05-01), Zulehner
patent: 4847053 (1989-07-01), Pastor et al.

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