Apparatus for manufacturing single crystal of silicon

Details Apparatus for manufacturing single crystal of silicon Apparatus for manufacturing single crystal of silicon

1997-03-20

1999-10-19

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117 30, 117 32, 117222, 117917, C30B 3500

Patent

active

059682663

ABSTRACT:
An apparatus for manufacturing a single crystal of silicon includes a crucible, a heater, electrodes, and a magnet. In addition to a plurality of heat generating portions and two main electrode portions, the heater has two or more auxiliary electrode portions. Two or more heater support members having an insulating property are further provided so as to support the heater through the auxiliary electrode portions. The number of heat generating portions which may be present between a heater support member and an electrode and between heater support members if adjacent to each other is equal to or less than 4. Each generating portion of the heater has a thickness of 25 mm or more. This structure makes it possible to produce a single crystal of silicon without causing breakage of a heater, even if a large electric current flows through the heater, even if a magnetic field of a high intensity is applied to a silicon melt in the crucible, and even if the heater has a large diameter.

REFERENCES:
patent: 3039071 (1962-06-01), Ford
patent: 4597949 (1986-07-01), Jasinski et al.
patent: 5330729 (1994-07-01), Oda et al.
patent: 5766346 (1998-06-01), Hayashi et al.
patent: 5766347 (1998-06-01), Shimomura et al.
patent: 5843228 (1998-12-01), Saitoh et al.

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