Apparatus for manufacturing single crystal

Details Apparatus for manufacturing single crystal Apparatus for manufacturing single crystal

2008-07-08

2008-07-08

Kunemund, Robert (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

C117S204000, C117S208000, C117S216000, C117S224000, C118S720000, C118S724000, C118S715000

Reexamination Certificate

active

11384297

ABSTRACT:
A method for manufacturing a single crystal includes the steps of: flowing a raw material gas toward a seed crystal in a reactive chamber so that the single crystal grows from the seed crystal; controlling the raw material gas by a gas flow control member having a cylindrical shape; passing the raw material gas through a clearance between the seed crystal and an inner wall of the gas flow control member; and flowing a part of the raw material gas to bypass the seed crystal. The method provides the single crystal having good quality.

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Notice of Reason Refusal issued from Japanese Patent Office dated Mar. 18, 2008 for related Japanese application No. 2003-285972 (a copy of English translation enclosed.).

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