Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Reexamination Certificate
2008-07-08
2008-07-08
Kunemund, Robert (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
C117S204000, C117S208000, C117S216000, C117S224000, C118S720000, C118S724000, C118S715000
Reexamination Certificate
active
07396411
ABSTRACT:
A method for manufacturing a single crystal includes the steps of: flowing a raw material gas toward a seed crystal in a reactive chamber so that the single crystal grows from the seed crystal; controlling the raw material gas by a gas flow control member having a cylindrical shape; passing the raw material gas through a clearance between the seed crystal and an inner wall of the gas flow control member; and flowing a part of the raw material gas to bypass the seed crystal. The method provides the single crystal having good quality.
REFERENCES:
patent: 4167554 (1979-09-01), Fisher
patent: 5725659 (1998-03-01), Sepehry-Fard
patent: 6113692 (2000-09-01), Jaussaud et al.
patent: 6214108 (2001-04-01), Okamoto et al.
patent: 6451112 (2002-09-01), Hara et al.
patent: 6565655 (2003-05-01), Hwang et al.
patent: 6746787 (2004-06-01), Naito et al.
patent: 6786969 (2004-09-01), Kondo et al.
patent: 6995036 (2006-02-01), Nishino et al.
patent: 7052546 (2006-05-01), Motakef et al.
patent: 7147714 (2006-12-01), Naito et al.
patent: 2002/0069818 (2002-06-01), Naito et al.
patent: 2002/0083892 (2002-07-01), Kondo et al.
patent: A-01-305898 (1989-12-01), None
patent: A-2002-060297 (2002-02-01), None
patent: A-2003-183098 (2003-07-01), None
Notice of Reason Refusal issued from Japanese Patent Office dated Mar. 18, 2008 for related Japanese application No. 2003-285972 (a copy of English translation enclosed.).
Hirose Fusao
Kato Tomohisa
Nishizawa Shinichi
Denso Corporation
Kunemund Robert
National Institute of Advanced Industrial Science and Technology
Posz Law Group , PLC
Rao G. Nagesh
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