Apparatus for manufacturing semiconductor device and method of r

Details Apparatus for manufacturing semiconductor device and method of r Apparatus for manufacturing semiconductor device and method of r

1996-05-22

1999-06-22

Codd, Bernard

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723MP, 118724, 118710, C23C 1642, C23F 108

Patent

active

059140003

ABSTRACT:
A polysilicon film which realizes an excellent ohmic contact is obtained. A board 4 to which a silicon substrate 3 is fixed is disposed within a chamber 1. An SiH.sub.4 gas, an N.sub.2 gas, a TEOS gas and an anhydrous HF gas are introduced into the chamber 1, through valves 8a, 8b, 8c and 8d, respectively. By means of a pump 7 through a valve 6, the air inside the chamber 1 is exhausted. The chamber 1 is heated up by a heater 2. First, the N.sub.2 gas, the TEOS gas and the anhydrous HF gas are introduced into the chamber 1, to remove a silicon natural oxidation film 34 which is formed on the silicon substrate 3. Next, after exhausting the air inside the chamber 1, the SiH.sub.4 and the N.sub.2 gas are introduced into the chamber 1, to form a polysilicon film 35 on the silicon substrate 3. Since the silicon natural oxidation film 34 and particles do not exist between the silicon substrate 3 and the polysilicon film 35 by employing this process, the polysilicon film 35 having an excellent ohmic contact is obtained.

REFERENCES:
patent: 4818327 (1989-04-01), Davis et al.
patent: 5336356 (1994-08-01), Ban et al.
patent: 5584963 (1996-12-01), Takahashi
patent: 5616208 (1997-04-01), Lee

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