Apparatus for manufacturing planarized aluminum films

Details Apparatus for manufacturing planarized aluminum films Apparatus for manufacturing planarized aluminum films

1987-07-28

1989-09-12

Nguyen, Nam X.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419212, C23C 1434

Patent

active

048657123

ABSTRACT:
An apparatus for planarizing an aluminum layer on a semiconductor wafer includes two deposition sources. The first source applies a refractory metal silicide layer to form a barrier to oxygen. The wafer is moved to a second deposition source which is an aluminum sputter device including a heater for the wafer, R.F. bias on the wafer and a magnetic mirror behind the wafer to move the plasma away from the wafer.

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