Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1995-03-10
1996-10-08
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117103, 117935, C30B 2510
Patent
active
055627714
ABSTRACT:
The present invention discloses an apparatus and method for producing microcrystal particles by irradiating pulse laser beam on raw material gas and causing the raw material gas to generate dielectric gas breakdown. The apparatus includes a laser oscillator for generating the pulsed laser beam, a reactor in which the raw material gas is activated and dissociated by irradiating the pulsed laser beam, and cohered to the microcrystal particles by generating luminescence, and a control device for controlling the laser oscillator to establish a pulse spacing of the pulse laser beam larger than a duration defined as a time during which the activated and dissociated raw material gas completes cohesion and turns into the microcrystal particles in the reactor.
REFERENCES:
patent: 4560634 (1985-12-01), Matsuo et al.
patent: 4940505 (1990-07-01), Schachmeyer et al.
patent: 5277786 (1994-01-01), Kawakami
patent: 5386798 (1995-02-01), Lowndes et al.
Kunemund Robert
Meller Michael N.
Victor Company of Japan Ltd.
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