Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Reexamination Certificate
2005-08-02
2005-08-02
Kunemund, Robert (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
C117S086000, C117S105000, C117S201000, C117S202000, C117S915000
Reexamination Certificate
active
06923859
ABSTRACT:
Disclosed are an apparatus for manufacturing GaN substrate and a manufacturing method thereof enabling to prevent micro-cracks or bending of a GaN substrate by separating a substrate and a GaN layer from each other after growing the GaN layer on the substrate in the same chamber. The present invention includes a chamber for loading a substrate therein, a heating means heating the chamber, a Ga boat installed inside the chamber to receive a Ga molecule producing material, an injection pipe injecting a nitrogen molecule producing gas in the chamber, the nitrogen molecule producing gas reacting chemically on the Ga molecule producing material to form a GaN layer on the substrate, and a transparent window at a circumference of the chamber to apply a laser beam to the substrate.
REFERENCES:
patent: 6750121 (2004-06-01), Kim
patent: 2002/0182839 (2002-12-01), Ogawa et al.
Fleshner & Kim LLP
Kunemund Robert
LG Electronics Inc.
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