Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Patent
1993-04-07
1994-11-29
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
117 49, 117207, C30B 2906
Patent
active
053679814
ABSTRACT:
A apparatus for manufacturing crystals through a floating zone method which includes: structure for forming a heat-melt zone so as to be held at an upper portion of a solid crystal; a barrier enclosure having an opening a lower end portion and provided in the vicinity of an upper surface of the heat-melt zone; structure for supplying a raw material granular crystal into the barrier enclosure; and structure for moving the solid crystal and the heat-melt zone forming structure relative to each other to thereby bring about crystal growth, wherein the barrier enclosure has a bottom surface being flat or inclined toward the center of the barrier enclosure, and wherein the opening is constituted by at least one hole formed in the bottom surface of the barrier enclosure.
REFERENCES:
patent: 2970895 (1961-02-01), Clark et al.
patent: 3086850 (1963-04-01), Marino, Jr. et al.
patent: 3870472 (1975-03-01), Adamski et al.
patent: 5108720 (1992-04-01), Bourbina et al.
patent: 5211802 (1993-05-01), Kaneko et al.
Breneman R. Bruce
Garrett Felisa
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