Apparatus for making epitaxial film

Coating apparatus – Immersion or work-confined pool type – Work-confined pool

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C118S666000, C117S073000

Reexamination Certificate

active

07905197

ABSTRACT:
An apparatus for growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.

REFERENCES:
patent: 3647578 (1972-03-01), Barnett et al.
patent: 3690965 (1972-09-01), Bergh et al.
patent: 3809584 (1974-05-01), Akai et al.
patent: 4026240 (1977-05-01), DeFevere et al.
patent: 4186045 (1980-01-01), Gatos et al.
patent: 4406245 (1983-09-01), Heinen
patent: 4464211 (1984-08-01), Logan et al.
patent: 4470368 (1984-09-01), Reynolds et al.
patent: 4768463 (1988-09-01), Yoshida et al.
patent: 5223079 (1993-06-01), Leung et al.
patent: 5326716 (1994-07-01), Bauser et al.
patent: 5391236 (1995-02-01), Krut et al.
Kochiya, T. et al., “Anisotropy of lateral growth rate in liquid phase epitaxy of InP and its association with kink-step structures on the surface,” Applied Surface Science, 237, No. 1-4 (Oct. 15, 2004): 235-241.
Nikolaev, A. E. et al., “SiC liquid-phase epitaxy on patterned substrates,” Journal of Crystal Growth,166, No. 1-4 (Sep. 1, 1996): 607-611.
Sakai, S. et al., “Selective Lateral Growth Mechanism of GaAs by Liquid-Phase Electroepitaxy,” Japanese Journal of Applied Physics, 33 (1994): 23-27, 5 pages.
Chung, K-W. et al., “Lateral growth of GaAs over W by selective liquid phase epitaxy,” Applied Physics Letters, 52 (1988): 1716.
Dobosz, D. et al., “Epitaxial lateral overgrowth of semiconductor structures by liquid phase epitaxy” International Journal of Materials and Product Technology, 22, No. 1/2/3 (2005): 50-63.
Zytkiewicz, Z. R. et al., “Recent progress in lateral overgrowth of semiconductor structures from the liquid phase,” Crystal Research and Technology, 40, No. 4-5, (2005): 321-328, 8 pages.
Wanlass, M. et al., “Monolithic, Ultra-Thin GaInP/GaAs/GalnAsTandem Solar Cells,” NREL/PR-520-39852, Presented at the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4) held May 7-12, 2006 in Waikoloa, Hawaii.
Goorsky, M.S. et al., “Engineered Layer Transfer Substrates for Heterogeneous Integration of III-V Compound Semiconductors,” 2008 The International Conference on Compound Semiconductor Manufacturing Technology.
Brendel, R. , “Crystalline thin-film silicon solar cells from layer-transfer processes: a review,” Proc.10th Workshop on Crystalline Silicon Solar Cell Materials and Processes, Aug. 13-16, 2000, Copper Mountain, USA, 9 pages.
Voncken, M. M. A. J. et al., “Etching AlAs with HF for Epitaxial Lift-Off Applications,” Journal of the Electrochemical Society, 151, No. 5 (2004): G347-G352.
Roelkens, G. et al., “Heterogeneous integration of III-V material and Silicon: fabrication and devices,” Proceedings Symposium IEEE/LEOS Benelux Chapter, (2004): 83-86, 4 pages.
Jokerst, N.M. et al., “The Heterogeneous Integration of Optical Interconnections Into Integrated Microsystems,” IEEE Journal of Selected Topics in Quantum Electronics, 9, No. 2, Mar./Apr. 2003, 11 pages.
Lee, X. Y. et al., “Thin Film GaAs Solar Cells on Glass Substrates by Epitaxial Liftoff,” National renewable energy laboratory and sandia national laboratories photovoltaics program review meeting. AIP Conference Proceedings, 394, (1997): 719-727.
Archer, M.J. et al., “Materials Processes for Ultrahigh Efficiency Lattice Mismatched Multijunction Solar Cells,” SPIE Optics+Photonics (2007): 6649-14, 22 pages.
Muller, P. et al., “Surface melting of nanoscopic epitaxial films,” Surface Science, 529, No. 1-2, (2003): 59-94, 67 pages.
Danielle, J. J., “Peltier-induced LPE and composition stabilization of GaAIAs,” Applied Physics Letters, 27, No. 7, (1975): 373.
Danielle, J. J. et al., “Electroepitaxial (peltier-induced) liquid phase epitaxy, compositional stabilization and x-ray analysis of thick (120 μm) In1-xGaxP Epilayers on (100) GaAs,” Journal of Electronic Materials, 12, No. 6 (1983): 1015-1031.
Dobosz, D. et al., “Liquid phase growth and characterization of laterally overgrown GaSb epitaxial layers,” Thin Solid Films, 412, (2002): 64.
Liu, Y.C. et al., “Computational analysis of lateral overgrowth of GaAs by liquid-phase epitaxy,” Journal of Crystal Growth, 275, (2005): 953-957.
Zytkiewicz, Z. R., “Epitaxial Lateral Overgrowth of GaAs: Principle and Growth Mechanism,” Crystal Research and Technology, 34, 5-6, (1999): 573-582, 10 pages.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Apparatus for making epitaxial film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for making epitaxial film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for making epitaxial film will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2675293

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.