Apparatus for making a single crystal of III-V compound semicond

Chemical apparatus and process disinfecting – deodorizing – preser – Chemical reactor – Including specific material of construction

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422249, 156607, 156608, 156617SP, 156DIG70, B01J 1700, B01J 1720

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active

041961714

ABSTRACT:
An apparatus includes a sealed vessel, a crucible received in the sealed vessel to hold a first molten liquid of III-V compound semiconductive material and a second molten liquid of an encapsulating material overlying the first molten liquid, and floating member having an opening for defining the cross sectional outline of a single crystal while being grown and positioned in the interface between the first and second molten liquids. The floating member is made from a mixed material consisting essentially of at least one of oxides of yttrium and the lanthanum series elements, alumina and silicon nitride each in a prescribed amount.

REFERENCES:
patent: 3002824 (1961-10-01), Francois
patent: 3647389 (1972-03-01), Weiner
patent: 3969125 (1976-07-01), Komeya et al.
patent: 3980438 (1976-09-01), Castonguay et al.
Nygren, Ringel, and Verleur, "Properties of GaP Single Crystals Grown by Liquid Encapsulated Pulling", J. Electrochem, Soc.: Solid State Science, vol. 118, No. 2, Feb. 1971, pp. 306-312.

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