Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1996-06-03
2000-02-01
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Multizone chamber
118725, 118300, 25049221, 156345, 430942, 432 55, C23C 1600, H01L 2122
Patent
active
060198508
ABSTRACT:
A method of continuous manufacture of semiconductor integrated circuits, said method and apparatus adapted to contain the semiconductor substrate, semiconductor deposition coating processes, and etching processes within a substantially collocated series of process chambers so that the semiconductor travels from one chamber to the next without exposure to airborne impurities and contact with manufacturing personnel. The invention has particular utility in the high volume fabrication of large surface area semiconductor circuits such as active matrix liquid crystal displays. The present invention contains a roll-to-roll and continuous belt embodiment.
REFERENCES:
patent: 3279964 (1966-10-01), Beck
patent: 3511703 (1970-05-01), Peterson
patent: 3602192 (1971-08-01), Grochowski
patent: 3667989 (1972-06-01), Keating
patent: 3765763 (1973-10-01), Nygaard
patent: 3790404 (1974-02-01), Garnache et al.
patent: 4048955 (1977-09-01), Anderson
patent: 4151034 (1979-04-01), Yamamoto
patent: 4227291 (1980-10-01), Schumacher
patent: 4410558 (1983-10-01), Izu et al.
patent: 4438723 (1984-03-01), Cannella et al.
patent: 4478880 (1984-10-01), Belouet
patent: 4485125 (1984-11-01), Izu et al.
patent: 4643627 (1987-02-01), Bednorz et al.
patent: 4664939 (1987-05-01), Ovshinsky
patent: 4681654 (1987-07-01), Clementi et al.
patent: 4694777 (1987-09-01), Roche
patent: 4728406 (1988-03-01), Banerjee et al.
patent: 4786616 (1988-11-01), Awal et al.
patent: 4789645 (1988-12-01), Calviello et al.
patent: 4951601 (1990-08-01), Maydan et al.
patent: 5019233 (1991-05-01), Blake et al.
patent: 5043299 (1991-08-01), Chang et al.
patent: 5186594 (1993-02-01), Tashima et al.
patent: 5256562 (1993-10-01), Vu et al.
patent: 5266116 (1993-11-01), Fujioka et al.
patent: 5386798 (1995-02-01), Lowndes et al.
patent: 5820679 (1998-10-01), Yokoyama
Petroff, P.M., et al., "Nanostructures Processing by Focus Ion Beam Implantation," J. Vac. Sci. Technol. B9(6):Nov./Dec. 1991.
Rubloff, G.W., "Maskless Selected Area Processing," J. Vac. Sci. Technol B7(6): Nov./Dec. 1989.
Rudder, R.A., et al., "Development of an Ultrahigh Vacuum, in vacuo Wafer Transfer Facility Integrated Processing," J. Vac. Sci. Technol A7(8):May/Jun. 1989.
Shirazi, M., et al., "Vacuum Mechatronics and Self-Contained Manufacturing for Microelectronics Processing," 7th IEEE/CHMT Int'l Electronic Mfg Tech. Symp., Sep. 1989.
Steckl, A.J., "Particle-Beam Fabrication and In Situ Processing of Integrated Circuits," Proceedings of the IEEE, vol. 74, No. 12, Dec. 1986.
Wood, S., et al., "Configuration and Management Strategies for Cluster-Based Fabs," Abs. 1993 Proceeding, International Semiconductor Manufacturing Science Symposium.
Yamada, I., "Advanced Ion Beam Processing Projects in Japan," Nuclear Instruments and Methods in Physics Research B59/60 1467-1475 (1991).
Atherton, R.W., et al, "Performance Analysis of Multi-Process Semiconductor Manufacturing Equipment," Abs. 1990 Proceedings, Advanced Semiconductor Mfg Conference and Workshop.
Beni, G., et al, "Vacuum Mechatronics," In Introduction to Vacuum Mechatronics, Chapter 1, Center for Robotic Systems in Microelectronics, Univ of Cal, Santa Barbara, California.
Ehrlich, D.J., et al, "Emerging Technology for in situ Processing: Patterning Alternatives," J. Vac. Sci. Tech. B6(3):May/Jun. 1988.
Gamo, K., "Focused Ion Beam Technology," Vacuum 42(1&2):89-93 (1991).
Gamo, K., "Ion Beam Microfabrication," Vacuum 44(11&12):1089-1094 (1993).
Harriott, L.R. "In situ Processing of Semiconductors," Materials Science and Engineering, B14:336-345 (1992).
Hayashi, T., et al., "High Performance Scaled Flash-Type EEPROMs Fabricated by in situ Multiple Rapid Thermal Processing," Electronics Letters 29(25):2178-2179 (1993).
Larrabee, G.B., "The Intelligent Microelectronics Factory of the Future," Abs. 1991 Proceedings, Int'l Semiconductor Mfg. Sci. Symp.
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