Apparatus for low pressure chemical vapor deposition

Coating apparatus – Gas or vapor deposition – With treating means

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

118715, 118725, 118729, C23C 1600

Patent

active

059284277

ABSTRACT:
An improved apparatus for a lower pressure chemical vapor deposition capable of achieving various kinds of thin films having a uniform thickness, preventing parts breakage, achieving automation of the system, and combining the use of a low pressure chemical vapor deposition apparatus and a plasma low pressure chemical vapor deposition apparatus, which includes a deposition base; a reactor disposed on the deposition base and having a reaction region formed therein; a substrate lifted and lowered in the reactor and on which a wafer is placed; a chemical source gas introducer for introducing a chemical source gas into the reactor; a substrate heating member disposed in the substrate for heating the wafer; and a reactor heating member for heating the reactor.

REFERENCES:
patent: 4142004 (1979-02-01), Hauser
patent: 4493997 (1985-01-01), Arai
patent: 4504730 (1985-03-01), Shimizu
patent: 4748135 (1988-05-01), Frijlink
patent: 5160543 (1992-11-01), Ishihara
patent: 5164012 (1992-11-01), Hattori
patent: 5254171 (1993-10-01), Hawakawa
patent: 5329095 (1994-07-01), Okase
patent: 5370371 (1994-12-01), Miyagi et al.
patent: 5536918 (1996-07-01), Ohkase
patent: 5683518 (1997-11-01), Moore

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Apparatus for low pressure chemical vapor deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for low pressure chemical vapor deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for low pressure chemical vapor deposition will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-874534

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.