Apparatus for liquid-phase epitaxial growth

Coating apparatus – Immersion or work-confined pool type – Rotating work about an axis through itself during coating

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422254, 437125, C30B 1906, H01L 21208

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053665520

ABSTRACT:
A method and an apparatus capable of efficiently producing an epitaxial layer grown at one time on a multiplicity of substrates with uniform thickness and quality are disclosed, in which a sealable growth chamber filled in a solution used to achieve liquid-phase epitaxial growth and holding therein at least one row of thin plate-like substrate is turned about the horizontal axis. The growth chamber is tilted or overturned so that the solution in the growth chamber is stirred homogeneously and the effect of gravity on the solution is excluded. A solution chamber for holding therein the solution is connected with the growth chamber via a gate valve. After the liquid-phase epitaxial growth, the growth chamber is overturned and then the gate valve is opened so that the solution in the growth chamber returns to the solution chamber. Thus, reuse of the solution is possible.

REFERENCES:
patent: 3648653 (1972-03-01), Vehse
patent: 3933539 (1976-01-01), Gartman
patent: 3997377 (1976-12-01), Izawa et al.
Doo, "Growing Epitaxial Films on a Continuous Line", IBM Technical Disclosure Bulletin, vol. 15, No. 5, Oct. 1972, pp. 1582-1583.
Patent Abstracts of Japan, vol. 6, No. 170 (E-128) (1048), Sep. 3, 1982, & JP-A-57 085 222, May 27, 1982.
"Rotating Boat System for Liquid Phase Epitaxial Growth of GaP Green Light-Emitting Diodes", Yamaguchi et al., Japanese Journal of Applied Physics, vol. 15, No. 7, Jul. 1976, pp. 1219-1227.
Patent Abstracts of Japan, vol. 8, No. 236 (C-249) (1673), Oct. 30, 1984, & JP-A-59 116 190, Jul. 4, 1984.
Patent Abstracts of Japan, vol. 14, No. 14 (C-674) (3957), Jan. 12, 1990, & JP-A-1 257 187, Oct. 13, 1989.
Patent Abstracts of Japan, vol. 13, No. 233 (C-601), May 29, 1989, & JP-A-1 042 390, Feb., 1989.

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