Apparatus for laser-cutting metal interconnections in a semicond

Electric heating – Metal heating – By arc

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219121FS, B23K 2600

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active

047452587

ABSTRACT:
In apparatus for cutting metal interconnections in a semiconductor device according to the present invention, a semiconductor wafer (5) which has metal interconnections having a high melting point is placed in an oxygen atmosphere (9) within a chamber (6), and laser beams (4) are irradiated through an optical system (2) and an optical beam positioner (3) on the high melting point metal interconnections while maintaining the interior at the chamber (6) in a vacuum of 1 to 10 mTorr., and introducing oxygen from an oxygen inlet port (7) under a pressure of 1 to 1.5 Torr. to sublimate and cut the high melting point metal interconnections.

REFERENCES:
patent: 3584183 (1971-06-01), Chiaretta
patent: 3772496 (1973-11-01), Harendza-Harinzma
patent: 4021898 (1977-05-01), Willis et al.
patent: 4182024 (1980-01-01), Cometta
patent: 4476375 (1984-10-01), Ogawa
B. K. Aggarwal, et al., IBM Technical Disclosure Bulletin, "Laser Cutting Metal Through Quartz", vol. 22, No. 5, Oct. 1979, pp. 1971-1972.

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