Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1997-07-24
2000-04-25
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
H01L 21302
Patent
active
060543884
ABSTRACT:
To provide a semiconductor wafer lapping method capable of preventing deformation of a press platen caused by repeating lapping and improving deterioration of TTV caused by rotation stop of semiconductor wafers. In a semiconductor wafer lapping method comprising the steps of placing a lapping carrier having holding holes loaded with semiconductor wafers between an upper press platen and a lower press platen which rotate in opposite directions, rotating the lapping carrier, and lapping the semiconductor wafers, the rotation speed of the lapping carrier is abruptly changed to induce rotation of the semiconductor wafers in the holding holes of the lapping carrier.
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Iwakiri Yoshiichirou
Oono Yoshiaki
Saito Kyuzo
Taniguchi Hironobu
Deo Duy-Vu
Komatsu Electronics Metals Co. Ltd.
Utech Benjamin L.
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