Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1997-04-21
1998-09-01
Nguyen, Nam
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20429805, 20429806, 20429808, 20419212, C23C 1434
Patent
active
058006885
ABSTRACT:
An ionized physical vapor deposition apparatus is provided with a helical RF coil that surrounds the chamber wall opposite a space between a target and a substrate holder. The coil is behind a quartz window in the wall of the chamber, which protects the coil from adverse interaction with plasma. The coil is energized with RF energy, preferably in the 0.1 to 60 MHz range, to form a secondary plasma in a volume of the space between the substrate holder and the main plasma that is adjacent the target. A shield between the space and the dielectric material prevents coating from forming on the window. The shield is formed of a plurality of angled sections that are spaced to facilitate communication of a secondary RF plasma from adjacent the window to the volume of the chamber where the sputtered material is ionized, with the sections angled and spaced to shadow at least most of the target from the window. In one embodiment, a plurality of axially spaced frusto-conical sections are used, with axial gaps to interrupt current eddy paths around the chamber. In another embodiment, the sections are in the form of a plurality angled axially extending circumferentially spaced blades. The shields may be commonly or separately biased to control contamination and to optimize the uniformity of coating on the substrate and the directionality of the flux of ionized material at the substrate.
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Lantsman Alexander D.
Licata Thomas J.
Nguyen Nam
Tokyo Electron Limited
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