Apparatus for ion plasma coating of articles

Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering

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C23C 1500

Patent

active

041750292

ABSTRACT:
The proposed apparatus is used to apply thin films of metals semiconductor and dielectric materials onto the surfaces of different articles.
The apparatus comprises a vacuum chamber accommodating a discharge chamber with at least a single slit in one of its walls. An electric field produces a plasma flow between an anode and a hot cathode arranged in the discharge chamber so that the hot cathode is located opposite the slit of the discharge chamber. A magnetic system produces a magnetic field extending through the hot cathode and slit perpendicular to the electric field between the anode and hot cathode. A target and an article holder are arranged on opposite sides of the plasma flow leaving the slit.
As a negative potential is applied to the target, plasma ions sputter the material of the target, which is deposited on the article, producing a thin film on its surface.

REFERENCES:
patent: 3369990 (1968-02-01), Hallen et al.
patent: 3526584 (1970-09-01), Shaw
patent: 3616452 (1971-10-01), Bessot et al.

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