Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1992-07-21
1994-08-16
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
25049221, 250400, H01J 3730, G21K 508
Patent
active
053389409
ABSTRACT:
Wafer disk holds wafers in position by centrifugal force and its rotating shaft is supported by a bearing capable of magnetic levitation that has a thrust bearing and radial bearings. An annular groove providing a heat radiating zone is formed under the wafer receiving faces of the wafer disk. A cooling plate cooled to a temperature not exceeding the temperature of liquid nitrogen is inserted into the groove in a contactless manner so that the wafer disk is cooled by heat radiation. In the absence of any area of physical contact in the mechanisms for axially supporting and cooling the wafer disk, ions can be implanted in low dose into wafers on the fast rotating disk while improving the quality of wafers after implantation. Further, no triboelectricity will develop, thereby contributing to an improvement in the precision of ion beam current measurement.
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patent: 5084624 (1992-01-01), Lamure et al.
patent: 5148034 (1992-09-01), Koike
Berman Jack I.
Beyer James
Nissin High Voltage Co., Ltd.
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