Apparatus for ion implantation

Details Apparatus for ion implantation Apparatus for ion implantation

2007-04-10

2007-04-10

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492300, C250S492200, C250S492100

Reexamination Certificate

active

11205651

ABSTRACT:
Apparatus for ion implantation having an ion trap for stabilizing a beam current are disclosed. An illustrated apparatus for ion implantation includes an arc chamber to ionize an impurity to create an ion beam; an ion beam trapping device to extract the ion beam from the arc chamber and to temporarily trap the extracted ion beam; an ion beam extracting and accelerating electrode to extract and accelerate the trapped ion beam of the ion beam trapping device; and an end station to hold a wafer in which the impurity is to be implanted.

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patent: 6107628 (2000-08-01), Smith et al.
patent: 6878930 (2005-04-01), Willoughby et al.
patent: 6943347 (2005-09-01), Willoughby et al.
patent: 02306530 (1990-12-01), None
patent: 2003006517 (2003-01-01), None

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