Apparatus for ion implantation

Details Apparatus for ion implantation Apparatus for ion implantation

1986-03-04

1988-08-23

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, 250281, H01J 37317

Patent

active

047663200

ABSTRACT:
An ion implantation apparatus comprising an ion source, extraction electrode, mass separator, deceleration tube, ion implantation unit, and a suppressor electrode disposed in the deceleration tube in the vicinity of its inlet for suppressing flow of secondary electrons produced in the separator into the deceleration tube. The secondary electrons are inhibited from flowing into the implantation unit along with ions.

REFERENCES:
patent: 4254340 (1981-03-01), Camplan et al.
patent: 4315153 (1982-02-01), Vahrenkamp
patent: 4383180 (1983-05-01), Turner
patent: 4560879 (1985-12-01), Wu et al.
patent: 4584473 (1986-04-01), Hashimoto et al.
patent: 4595837 (1986-06-01), Wu et al.
Low Energy Ion Beam Formation for Film Formation--S. C. Cheng, I. Yamada and T. Takagi, Ion Beam Engineering Lab--Kyoto University.

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