Abrading – Precision device or process - or with condition responsive... – By optical sensor
Reexamination Certificate
2000-06-07
2003-09-02
Eley, Timothy V. (Department: 3724)
Abrading
Precision device or process - or with condition responsive...
By optical sensor
C451S009000, C451S010000, C451S297000
Reexamination Certificate
active
06612901
ABSTRACT:
TECHNICAL FIELD
The present invention relates to devices for endpointing or otherwise monitoring the status of mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies.
BACKGROUND OF THE INVENTION
Mechanical and chemical-mechanical planarizing processes (collectively “CMP”) are used in the manufacturing of electronic devices for forming a flat surface on semiconductor wafers, field emission displays and many other microelectronic device substrate assemblies. CMP processes generally remove material from a substrate assembly to create a highly planar surface at a precise elevation in the layers of material on the substrate assembly.
FIG. 1
schematically illustrates an existing web-format planarizing machine
10
for planarizing a substrate
12
. The planarizing machine
10
has a support table
14
with a top-panel
16
at a workstation where an operative portion (A) of a planarizing pad
40
is positioned. The top-panel
16
is generally a rigid plate to provide a flat, solid surface to which a particular section of the planarizing pad
40
may be secured during planarization.
The planarizing machine
10
also has a plurality of rollers to guide, position and hold the planarizing pad
40
over the top-panel
16
. The rollers include a supply roller
20
, idler rollers
21
, guide rollers
22
, and a take-up roller
23
. The supply roller
20
carries an unused or pre-operative portion of the planarizing pad
40
, and the take-up roller
23
carries a used or post-operative portion of the planarizing pad
40
. Additionally, the left idler roller
21
and the upper guide roller
22
stretch the planarizing pad
40
over the top-panel
16
to hold the planarizing pad
40
stationary during operation. A motor (not shown) generally drives the take-up roller
23
to sequentially advance the planarizing pad
40
across the top-panel
16
along a pad travel path T-T, and the motor can also drive the supply roller
20
. Accordingly, clean pre-operative sections of the planarizing pad
40
may be quickly substituted for used sections to provide a consistent surface for planarizing and/or cleaning the substrate
12
.
The web-format planarizing machine
10
also has a carrier assembly
30
that controls and protects the substrate
12
during planarization. The carrier assembly
30
generally has a substrate holder
32
to pick up, hold and release the substrate
12
at appropriate stages of the planarizing process. Several nozzles
33
attached to the substrate holder
32
dispense a planarizing solution
44
onto a planarizing surface
42
of the planarizing pad
40
. The carrier assembly
30
also generally has a support gantry
34
carrying a drive assembly
35
that can translate along the gantry
34
. The drive assembly
35
generally has an actuator
36
, a drive shaft
37
coupled to the actuator
36
, and an arm
38
projecting from the drive shaft
37
. The arm
38
carries the substrate holder
32
via a terminal shaft
39
such that the drive assembly
35
orbits the substrate holder
32
about an axis B—B (arrow R
1
). The terminal shaft
39
may also be coupled to the actuator
36
to rotate the substrate holder
32
about its central axis C—C (arrow R
2
).
The planarizing pad
40
and the planarizing solution
44
define a planarizing medium that mechanically and/or chemically-mechanically removes material from the surface of the substrate
12
. The planarizing pad
40
used in the web-format planarizing machine
10
is typically a fixed-abrasive planarizing pad in which abrasive particles are fixedly bonded to a suspension material. In fixed-abrasive applications, the planarizing solution is a “clean solution” without abrasive particles. In other applications, the planarizing pad
40
may be a non-abrasive pad composed of a polymeric material (e.g, polyurethane) or other suitable materials. The planarizing solutions
44
used with the non-abrasive planarizing pads are typically slurries with abrasive particles.
To planarize the substrate
12
with the planarizing machine
10
, the carrier assembly
30
presses the substrate
12
against the planarizing surface
42
of the planarizing pad
40
in the presence of the planarizing solution
44
. The drive assembly
35
then translates the substrate
12
across the planarizing surface
42
by orbiting the substrate holder
32
about the axis B—B and/or rotating the substrate holder
32
about the axis C—C. As a result, the abrasive particles and/or the chemicals in the planarizing medium remove material from the surface of the substrate
12
.
CMP processes should consistently and accurately produce a uniformly planar surface on the substrate to enable precise fabrication of circuits and photo-patterns. During the fabrication of transistors, contacts, interconnects and other features, many substrates develop large “step heights” that create highly topographic surfaces across the substrates. Such highly topographical surfaces can impair the accuracy of subsequent photolithographic procedures and other processes that are necessary for forming sub-micron features. For example, it is difficult to accurately focus photo patterns to within tolerances approaching 0.1 micron on topographic surfaces because sub-micron photolithographic equipment generally has a very limited depth of field. Thus, CMP processes are often used to transform a topographical surface into a highly uniform, planar surface at various stages of manufacturing the microelectronic devices.
In the highly competitive semiconductor industry, it is also desirable to maximize the throughput of CMP processing by producing a planar surface on a substrate as quickly as possible. The throughput of CMP processing is a function, at least in part, of the ability to accurately stop CMP processing at a desired endpoint. In a typical CMP process, the desired endpoint is reached when the surface of the substrate is planar and/or when enough material has been removed from the substrate to form discrete components (e.g., shallow trench isolation areas, contacts and damascene lines). Accurately stopping CMP processing at a desired endpoint is important for maintaining high throughput because the substrate assembly may need to be re-polished if it is “under-planarized,” or components on the substrate may be destroyed if it is “over-polished.” Thus, it is highly desirable to stop CMP processing at the desired endpoint.
In one conventional method for determining the endpoint of CMP processing, the planarizing period of a particular substrate is estimated using an estimated polishing rate based upon the polishing rate of identical substrates that were planarized under the same conditions. The estimated planarizing period for a particular substrate, however, may not be accurate because the polishing rate and other variables may change from one substrate to another. Thus, this method may not produce accurate results.
In another method for determining the endpoint of CMP processing, the substrate is removed from the pad and then a measuring device measures a change in thickness of the substrate. Removing the substrate from the pad, however, interrupts the planarizing process and may damage the substrate. Thus, this method generally reduces the throughput of CMP processing.
U.S. Pat. No. 5,433,651 issued to Lustig et al. (“Lustig”) discloses an in-situ chemical-mechanical polishing machine for monitoring the polishing process during a planarizing cycle. The polishing machine has a rotatable polishing table including a window embedded in the table and a planarizing pad attached to the table. The pad has an aperture aligned with the window embedded in the table. The window is positioned at a location over which the workpiece can pass for in-situ viewing of a polishing surface of the workpiece from beneath the polishing table. The planarizing machine also includes a device for measuring a reflectance signal representative of an in-situ reflectance of the polishing surface of the workpiece. Lustig discloses terminating a planarizing cycle at the interface
Eley Timothy V.
Micro)n Technology, Inc.
Perkins Coie LLP
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