Apparatus for improving the reactant gas flow in a reaction cham

Details Apparatus for improving the reactant gas flow in a reaction cham Apparatus for improving the reactant gas flow in a reaction cham

1991-05-03

1993-09-14

Bueker, Richard

Coating processes

Coating by vapor, gas, or smoke

4272555, 118715, 118725, 118730, C23C 1600

Patent

active

052446948

ABSTRACT:
Apparatus for carrying out an epitaxial deposition process upon a single wafer disposed in a reaction chamber. The chamber has a substantially rectangular cross section reduced in area for increased system efficiency. A susceptor may be mounted in a well or in a downstream portion of a dual height chamber having a greater cross sectional area. Purge gas supplied through an aperture in the chamber prevents undesirable reactant gas deposits beneath the susceptor. The velocity profile and flow of reactant gas beneath the susceptor are controlled by a shaped transversely extending gap between the susceptor and the upstream portion of the chamber.

REFERENCES:
patent: 4714594 (1987-12-01), Mircea

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