Apparatus for improving the reactant gas flow in a reaction cham

Details Apparatus for improving the reactant gas flow in a reaction cham Apparatus for improving the reactant gas flow in a reaction cham

1990-01-23

1991-09-03

Bueker, Richard

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

4272555, 118715, 118719, 118725, 118729, 118730, C23C 1600

Patent

active

050443151

ABSTRACT:
Apparatus for processing a single wafer and a reaction chamber for conducting an epitaxial deposition process therein. The chamber has a substantially rectangular cross section reduced for increased system efficiency. Because the reduced cross section has insufficient room for a susceptor, the susceptor, in one embodiment, is mounted within a second portion of a dual height chamber having a greater cross sectional area. Purge gas supplied through an aperture in the chamber prevents undesirable deposits beneath the susceptor from reactant gas. The velocity profile and flow of reactant gas beneath the susceptor are controlled, for example, by a quartz plate which narrows and simultaneously shapes the gap between the susceptor and the input end of the chamber.

REFERENCES:
patent: 4714594 (1987-12-01), Mircea

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