Apparatus for improving mechanical strength of the neck section

Details Apparatus for improving mechanical strength of the neck section Apparatus for improving mechanical strength of the neck section

1996-09-13

1998-10-27

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117200, 117217, 117222, 117900, C30B 3500

Patent

active

058273670

ABSTRACT:
An apparatus and method for growing large diameter silicon crystals using the Czochralski (Cz) method, wherein the neck section of the crystal is significantly strengthened to eliminate the risk of breakage in the neck section, by providing a heat shield assembly which is located adjacent to the neck section and ascends in conjunction therewith to force the cooling gas directly onto the neck section of the silicon ingot.

REFERENCES:
patent: 4738832 (1988-04-01), Drechsel
patent: 4981549 (1991-01-01), Yamashita et al.
patent: 5004519 (1991-04-01), Hariri
patent: 5248378 (1993-09-01), Oda et al.
patent: 5264189 (1993-11-01), Yamashita et al.
patent: 5441014 (1995-08-01), Tomioka et al.
patent: 5443034 (1995-08-01), Everts
patent: 5476065 (1995-12-01), Ikezawa et al.
patent: 5573591 (1996-11-01), Ikezawa et al.
Minimization of thermoelastic stresses in Czochralski grown silicon: application of the integrated system model; D.E. Bornside, T.A. Kinney and R.A. Brown; Journal of Crystal Growth 108 (1991) 779-805; Department of Chemical Engineering and Materials Processing Center, Massachusetts Institute of Technology, Aug. 23, 1990.

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