Apparatus for improved operation of MOSFET devices in cryogenic

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

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257536, 363 14, H01L 2900

Patent

active

061630640

ABSTRACT:
An electronic circuit that comprises a MOSFET device includes source, drain and gate terminals and operates at cryogenic temperatures. The circuit includes a snubber that is connected between the source and drain terminals of the MOSFET and that has capacitance but substantially no resistance. A control element, which is coupled to at least the gate terminal of the MOSFET device, turns the device "on" (i.e., it effects conduction in the MOSFET) by selectively applying a voltage to the gate terminal that is positive with respect to the source terminal and with respect to ground. The circuit further includes a resistive load, e.g., a resistor, that is coupled in series between the control element and the gate terminal. The control element selectively applies negative-going voltage to the gate terminal, e.g., when the MOSFET is not on.

REFERENCES:
patent: 4692643 (1987-09-01), Tokunaga et al.
patent: 5028988 (1991-07-01), Porter et al.
patent: 5040053 (1991-08-01), Porter et al.
patent: 5119175 (1992-06-01), Long et al.
patent: 5166776 (1992-11-01), Dederer et al.

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