Coating apparatus – Gas or vapor deposition – With treating means
Patent
1993-12-17
1995-11-21
Kunemund, Robert
Coating apparatus
Gas or vapor deposition
With treating means
118723I, C23C 1600
Patent
active
054682967
ABSTRACT:
An apparatus for producing a plasma suitable for semiconductor processing at pressures in the low millitorr range. The apparatus includes a vacuum chamber with a dielectric window, a generally planar coil disposed adjacent the window outside the chamber and coupled to an appropriate power source, and a plasma initiator disposed within the chamber. Once the plasma is initiated, the planar coil sustains the plasma by inductive power coupling. In one embodiment the plasma initiator is a secondary electrode disposed within the chamber and coupled to a second RF power source. In an alternative embodiment both the secondary electrode and a target pedestal are coupled to the secondary RE power source through a power splitter. In an alternative embodiment, the plasma initiator is used to ionize a portion of the process gas and provide a plasma that may then inductively couple with the planar coil. Initial ionization of the process gas may be achieved by use of an ultraviolet light source, an ultraviolet laser, a high voltage power source such as a tesla coil, or an electrical arc forming device such as a spark plug.
REFERENCES:
patent: H566 (1989-01-01), Nyaiesh
patent: 4557819 (1985-12-01), Meacham et al.
patent: 4664938 (1987-05-01), Walker
patent: 4804431 (1989-02-01), Ribner
patent: 4863559 (1989-09-01), Douglas
patent: 4877642 (1989-10-01), Gartner et al.
patent: 4891118 (1990-01-01), Ooiwa et al.
patent: 4946537 (1990-08-01), Huikata et al.
patent: 4948458 (1990-08-01), Ogle
patent: 4957590 (1990-09-01), Douglas
patent: 5006760 (1991-04-01), Drake, Jr.
patent: 5032221 (1991-07-01), Roselle et al.
patent: 5078823 (1992-01-01), Chollet et al.
patent: 5171401 (1992-12-01), Roselle
patent: 5183775 (1993-02-01), Levy
patent: 5277751 (1994-01-01), Ogle
patent: 5310452 (1994-05-01), Doki
patent: 5346578 (1994-09-01), Benzing
Bose Frank
Franklin Mark
Patrick Roger
Schoenborn Philippe
Chang Joni
Kunemund Robert
LSI Logic Corporation
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