Apparatus for hot wall reactive ion etching using a dielectric o

Details Apparatus for hot wall reactive ion etching using a dielectric o Apparatus for hot wall reactive ion etching using a dielectric o

1994-03-08

1998-08-25

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

216 67, H01L 21302

Patent

active

057980160

ABSTRACT:
The present invention relates to a method and apparatus for etching semiconductor devices where the undesirable deposition of films on the internal surfaces of the apparatus are prevented during the etching process. The system for etching devices provides an etching chamber having a deposition resistant surface, a holder for holding the device to be etched, and a heater for heating the deposition resistant surface to a temperature between 100.degree. C. to 600.degree. C. to impede the formation of films on the walls of the chamber. The etching system may further include the deposition resistant surface surrounding the holder while not interfering with the plasma used to etch the substrate.

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R.G. Frieser, W.H. Ma, G.M. Ozols and B.N Zingerman, "IBM Technical Disclosure Bulletin", Polymerization Detection In Reactive Ion Etching, (Feb. 1982).
H.J. Geipel, "IBM Technical Disclosure Bulletin", End-Point Detection For Reactive Ion Etching, (Jul. 1977).
"Plasma Cleaning By use of Hollow Cathode Discharge In a Trifluoromethane-Silicon Dioxide Dry Etching System",-Watanabe et al; 1992'; Jpn. J. Appl. Phys. Part 1, 31(5A); pp. 1491-1498.
RD 32 2095, Feb. 10, 1991; Anonymous author; abstract only.

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