Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2005-07-12
2005-07-12
Hiteshew, Felisa (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S214000, C023S29500G
Reexamination Certificate
active
06916371
ABSTRACT:
A method for growing stoichiometric lithium niobate and lithium tantalate single crystals is provided. A crystal growing apparatus that includes a long crucible with a separation member therein is used. A solid feed material is quenched from a molten state, solidified in batches or sintered before charged in the long crucible to obtain substantially stoichiometric solids. The separation member divides the long crucible into a melting zone and a feeding zone located under the melting zone, and it could effectively prevent bubble formation in the growing crystal. The stoichiometry of the axial and radial composition can be well controlled, and the control of the diameter of the crystal body is easily achieved as well.
REFERENCES:
patent: 3953174 (1976-04-01), LaBelle, Jr.
patent: 4187139 (1980-02-01), Brice et al.
patent: 4623423 (1986-11-01), Aubert et al.
patent: 5938841 (1999-08-01), Kitagawa et al.
patent: 6074477 (2000-06-01), Imaeda et al.
patent: 6464777 (2002-10-01), Kitamura et al.
Chyun IP Office
Hiteshew Felisa
National Taiwan University
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