Coating apparatus – Gas or vapor deposition – Work support
Patent
1998-09-15
1999-11-30
Breneman, R. Bruce
Coating apparatus
Gas or vapor deposition
Work support
C23C 1600, C23C 1654
Patent
active
059935570
ABSTRACT:
An apparatus for growing a high-quality single-crystalline semiconductor film on a substrate based on vapor phase growth while rotating the substrate and preventing micro-particles generated by a rotary drive unit from adhering onto the major plane of the substrate. The substrate 2 set inside the reaction chamber 21 is rotated using the rotary drive unit 7, a reaction gas 10 is fed to the major plane side of the substrate 2, a purge gas 3a is fed to the back space of the substrate in the reaction to chamber 21 to replace a space 11a with a carrier gas atmosphere, where the rotary drive unit 7 is located in the purge gas discharge section 13, a purge gas discharge duct 12 connected to the purge gas discharge section, and further to the purge gas discharge duct 12 is connected a gas flow controller 8, and serially in the downstream side thereof is connected an evacuation pump 9.
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patent: 5156820 (1992-10-01), Wong et al.
patent: 5244694 (1993-09-01), Ozias
patent: 5324540 (1994-06-01), Terada
Habuka Hitoshi
Mayuzumi Masanori
Tomita Munenori
Breneman R. Bruce
Hassanzadeh Parviz
Shin-Etsu Handotai & Co., Ltd.
Snider Ronald R.
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