Apparatus for growing silicon crystals

Details Apparatus for growing silicon crystals Apparatus for growing silicon crystals

1992-08-21

1993-11-23

Lewis, Michael

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

Including specific material of construction

1566191, 156DIG73, C30B 3500, C30B 1512

Patent

active

052641899

ABSTRACT:
An apparatus for growing silicon single-crystals comprising a crucible containing a silicon melt, a furnace for housing the crucible and having an opening located above the crucible, a pulling mechanism for pulling a seed crystal from the melt to grow a silicon single-crystal, a cooling shell having a lower end spaced apart and located above the melt and disposed around said silicon single-crystal for cooling the silicon single crystal from a temperature of 1,050.degree. to 850.degree. C. in no more than 140 minutes as it is being pulled, and, a secondary heater for heating the silicon single crystal as it is being pulled, such that the dwelling time of the single crystal in a temperature zone of 800.degree. C. to 600.degree. C. is at least two hours. The secondary heater is disposed above the cooling shell and coaxial therewith and is arranged so as to define a space between the secondary heater and the cooling shell. Means for introducing an argon flow through the secondary heater into the cooling shell is located at the furnace opening. The argon gas flow is partially diverted by the space between the secondary heater and the cooling shell resulting in a silicon single-crystal having increased oxygen precipitate distribution.

REFERENCES:
patent: 3265469 (1966-08-01), Hall
patent: 4597949 (1986-07-01), Jasinski et al.
patent: 4650540 (1987-03-01), Stoll
patent: 4704257 (1987-11-01), Tomizawa et al.
patent: 4956153 (1990-09-01), Yamagishi et al.
patent: 4981549 (1991-01-01), Yamashita et al.
Kern, Process Heat Transfer, McGraw-Hill Book Co., 1950, pp. 512-521.

Affiliated with

Also associated with

Rating

Apparatus for growing silicon crystals does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for growing silicon crystals, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for growing silicon crystals will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1846692