Apparatus for growing silicon carbide crystals

Details Apparatus for growing silicon carbide crystals Apparatus for growing silicon carbide crystals

1996-12-18

1997-09-16

Bueker, Richard

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

117951, 118715, C23C 1400, C30B 2736

Patent

active

056675879

ABSTRACT:
A silicon carbide growth container for placement into a crystal growing furnace. The growth container has a liner of pyrolytic graphite which seals the inside of the container and allows for easy removal of the grown silicon carbide crystal.

REFERENCES:
patent: 5433167 (1995-07-01), Furukawa
patent: 5441011 (1995-08-01), Takahaski

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