Apparatus for growing multiple single crystals

Details Apparatus for growing multiple single crystals Apparatus for growing multiple single crystals

1993-11-08

1994-12-20

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117208, 117216, 219210, 219420, C30B 1510

Patent

active

053738071

ABSTRACT:
A method for growing multiple high-purity single crystals from a replenished melt by maintaining the purity of molten source material in the melt held in a crucible in a furnace of the type used for growing high-purity single crystals. The method includes the steps of growing at least one crystal from the source material in the crucible, extracting a portion of a volume of the melt remaining in the crucible, adding high-purity source material to the melt, and growing at least one more single crystal. Extractor apparatus used in the method includes an insulated receptacle having an inlet tube for conducting molten source material into the receptacle. A vacuum attached to the receptacle is used to draw the source material into the receptacle.

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